|
Part Number
|
K4S281632B-TC75 |
|
Manufacturer
|
Samsung semiconductor |
|
Description
|
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
|
Published
|
Apr 7, 2005 |
|
Detailed Description
|
K4S281632B
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
* Samsung Ele...
|
|
Datasheet
|
K4S281632B-TC75
|
Overview
K4S281632B
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.
0 Aug.
1999
* Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
0 Aug.
1999
K4S281632B
2M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• • • • JEDEC standard 3.
3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle)
...
Similar Datasheet