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K4S281632B-TC75

Part Number	K4S281632B-TC75
Manufacturer	Samsung semiconductor
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Published	Apr 7, 2005
Detailed Description	K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Ele...
Datasheet	K4S281632B-TC75 PDF File

Overview

K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.
0 Aug.
1999 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
0 Aug.
1999 K4S281632B 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.
3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S281632B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
• • • • • ORDERING INFORMATION Part No.
K4S281632B-TC/L75 K4S281632B-TC/L80 K4S281632B-TC/L1H K4S281632B-TC/L1L K4S281632B-TC/L10 Max Freq.
133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) 66MHz(CL=2 &3) LVTTL 54 TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Input Register Bank Select 2M x 16 Sense AMP 2M x 16 2M x 16 2M x 16 Refresh Counter Output Buffer Row Decoder Row Buffer DQi Address Register CLK ADD Column Decoder Col.
Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Timing Register Programming Register LWCBR LDQM CLK CKE CS RAS CAS WE LDQM UDQM * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
0 Aug.
1999 K4S281632B P...

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