|
Part Number
|
K4S560832D |
|
Manufacturer
|
Samsung semiconductor |
|
Description
|
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
|
Published
|
Apr 7, 2005 |
|
Detailed Description
|
K4S560832D
CMOS SDRAM
256Mbit SDRAM
8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.1 May. 2003
* Samsung Elec...
|
|
Datasheet
|
K4S560832D
|
Overview
K4S560832D
CMOS SDRAM
256Mbit SDRAM
8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.
1 May.
2003
* Samsung Electronics reserves the right to change products or specification without notice.
Rev.
1.
1 May.
2003
K4S560832D
Revision History Revision 0.
0 (Jan.
, 2002)
- First release
CMOS SDRAM
Revision 0.
1(May.
, 2003)
- ICC6 of Low power is changed from 1.
0 to 1.
5 due to typo.
Rev.
1.
1 May.
2003
K4S560832D
8M x 8Bit x 4 Banks Synchronous DRAM
FEATURES
• JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & I...
Similar Datasheet