Part Number
|
K4S561633C-N |
Manufacturer
|
Samsung semiconductor |
Description
|
16Mx16 SDRAM 54CSP |
Published
|
Apr 7, 2005 |
Detailed Description
|
K4S561633C-R(B)L/N/P
CMOS SDRAM
16Mx16 SDRAM 54CSP
(VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V)
Revision 1.4 December 2002
Rev....
|
Datasheet
|
K4S561633C-N
|
Overview
K4S561633C-R(B)L/N/P
CMOS SDRAM
16Mx16 SDRAM 54CSP
(VDD/VDDQ 3.
0V/3.
0V or 3.
3V/3.
3V)
Revision 1.
4 December 2002
Rev.
1.
4 Dec.
2002
K4S561633C-R(B)L/N/P
4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP
FEATURES
• 3.
0V & 3.
3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1 & 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• DQM for masking • Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25° C ~ 70 °C).
Exte...
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