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K4S561633C-RL

Samsung semiconductor
Part Number K4S561633C-RL
Manufacturer Samsung semiconductor
Description 16Mx16 SDRAM 54CSP
Published Apr 7, 2005
Detailed Description K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev....
Datasheet PDF File K4S561633C-RL PDF File

K4S561633C-RL
K4S561633C-RL

Overview
K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.
0V/3.
0V or 3.
3V/3.
3V) Revision 1.
4 December 2002 Rev.
1.
4 Dec.
2002 K4S561633C-R(B)L/N/P 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES • 3.
0V & 3.
3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1 & 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• DQM for masking • Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25° C ~ 70 °C).
Extended Temperature Operation ( -25° C ~ 85 °C).
Inderstrial Temperature Operation ( -40° C ~ 85° C).
• 54balls CSP (-RXXX - Pb, -BXXX - Pb Free) CMOS SDRAM GENERAL DESCRIPTION The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
ORDERING INFORMATION Part No.
K4S561633C-R(B)L/N/P75 K4S561633C-R(B)L/N/P1H K4S561633C-R(B)L/N/P1L Max Freq.
133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=2) 105MHz(CL=3)*1 LVCMOS Interface Package 54 CSP Pb (Pb Free) FUNCTIONAL BLOCK DIAGRAM -R(B)L ; Low Power, Operating Temp : -25°C ~ 70° C.
-R(B)N ; Low Power, Operating Temp : -25°C ~ 85 ° C.
-R(B)P : Low Power, Operating Temp : -40° C ~ 85° C.
Note : 1.
In case of 40MHz Frequency, CL1 can be supported.
I/O Control LWE Data Input Register LDQM Bank Select 4M x 16 Sense AMP 4M x 16 4M x 16 4M x 16 Refresh Counter Output Buffer Row Decoder Row Buffer DQ...


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