|
Part Number
|
K4S561633F-G |
|
Manufacturer
|
Samsung semiconductor |
|
Description
|
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
|
Published
|
Apr 7, 2005 |
|
Detailed Description
|
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS co...
|
|
Datasheet
|
K4S561633F-G
|
Overview
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.
0V & 3.
3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (8K cycle).
Commercial Temperature...
Similar Datasheet