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K4S561633F-X

Samsung semiconductor
Part Number K4S561633F-X
Manufacturer Samsung semiconductor
Description 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
Published Apr 7, 2005
Detailed Description K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS co...
Datasheet PDF File K4S561633F-X PDF File

K4S561633F-X
K4S561633F-X

Overview
K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.
0V & 3.
3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (8K cycle).
Commercial Temperature Operation (-25°C ~ 70°C).
Extended Temperature Operation (-25°C ~ 85°C).
54Balls BOC with 0.
8mm ball pitch ( -X : Leaded, -Z : Lead Free).
Mobile-SDRAM GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabric...


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