Part Number
|
SM8LZ47 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE |
Published
|
Apr 7, 2005 |
Detailed Description
|
SM8LZ47
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM8LZ47
AC POWER CONTROL APPLICATIONS
l Repetitive ...
|
Datasheet
|
SM8LZ47
|
Overview
SM8LZ47
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM8LZ47
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage l R.
M.
S ON−State Current l High Commutating (dv / dt) l Isolation Voltage : VDRM = 800V : IT(RMS) = 8A : (dv / dt) c = 10V / µs (Min.
) : VISOL = 1500V AC Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC Repetitive PeakOff−State Voltage R.
M.
S On−State Current (Full Sine Waveform) Peak One Cycle Surge On-State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC...
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