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SM8LZ47

Toshiba Semiconductor
Part Number SM8LZ47
Manufacturer Toshiba Semiconductor
Description TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
Published Apr 7, 2005
Detailed Description SM8LZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8LZ47 AC POWER CONTROL APPLICATIONS l Repetitive ...
Datasheet PDF File SM8LZ47 PDF File

SM8LZ47
SM8LZ47

Overview
SM8LZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8LZ47 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage l R.
M.
S ON−State Current l High Commutating (dv / dt) l Isolation Voltage : VDRM = 800V : IT(RMS) = 8A : (dv / dt) c = 10V / µs (Min.
) : VISOL = 1500V AC Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive PeakOff−State Voltage R.
M.
S On−State Current (Full Sine Waveform) Peak One Cycle Surge On-State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC...


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