SGM2014AM
GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office.
Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.
This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
Features • Low voltage operation • Low noise: NF = 1.
5dB (typ.
) at 900MHz • High gain: Ga = 18dB (typ.
) at 900MHz • Low cross-modulation • High stability • Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect
transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to s...