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SGM2014AM

Part Number	SGM2014AM
Manufacturer	Sony Corporation
Description	GaAs N-channel Dual-Gate MES FET
Published	Apr 8, 2005
Detailed Description	SGM2014AM GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Descri...
Datasheet	SGM2014AM PDF File

Overview

SGM2014AM GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office.
Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.
This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
Features • Low voltage operation • Low noise: NF = 1.
5dB (typ.
) at 900MHz • High gain: Ga = 18dB (typ.
) at 900MHz • Low cross-modulation • High stability • Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 12 • Gate 1 to source voltage VG1S –5 • Gate 2 to source voltage VG2S –5 • Drain current ID 55 • Allowable power dissipation PD 150 • Channel temperature Tch 150 • Storage temperature Tstg –55 to +150 V V V mA mW °C °C Sony reserves the right to change products and specifications without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Application circuits shown, if any, are typical examples illustrating the operation of the devices.
Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1– E96Y09-PS SGM2014AM Electrical Characteristics Item Drain cut-off current Symbol IDSX Condition Min.
Typ.
VDS = 12V VG1S = –4V VG2S = 0V VG1S = –4.
5V IG1SS VG2S = 0V VDS = 0V VG2S = –4.
5V IG2SS VG1S = 0V VDS = 0V VDS = 5V IDSS VG1S = 0V VG2S = 0V VDS = 5V VG1S (OFF) ID = 100µA VG2S = 0V VDS = 5V VG2S (OFF) ID = 100µA VG1S = 0V VDS = 5V I D = 10mA gm VG2S =1.
5V f = 1kHz VDS = 5V Ciss ID = 10mA VG2S = 1.
5V Crss f = 1MHz VDS = 5V NF ID = 10mA VG2S = 1.
5V Ga f = 900MHz (Ta = 25°C) Max.
50 unit µA Gate 1 to source current –8 µA Gate 2 to source current –8 µA Drain saturation current 8 28 mA Gate 1 to source cut-off voltage –2.
5 V Gate 2 to source...

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