SGM2016AN
GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office.
Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.
This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.
Features • Ultra-small package • Low voltage operation • Low noise NF = 1.
2dB (typ.
) at 900MHz • High gain Ga = 21dB (typ.
) at 900MHz • High stability • Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-channel, dual-gate metal semiconductor field-effect
transistor Absolute Maximum Ratin...