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SGM2016AP

Sony Corporation
Part Number SGM2016AP
Manufacturer Sony Corporation
Description GaAs N-channel Dual-Gate MES FET
Published Apr 8, 2005
Detailed Description SGM2016AM/AP GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Des...
Datasheet PDF File SGM2016AP PDF File

SGM2016AP
SGM2016AP

Overview
SGM2016AM/AP GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office.
Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.
This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.
Features • Low voltage operation • Low noise NF = 1.
2dB (typ.
) at 900MHz • High gain Ga = 21dB (typ.
) at 900MHz • High stability • Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 12 • Gate 1 to source voltage VG1S –5 • Gate 2 to source voltage VG2S –5 • Drain current ID 55 • Allowable power dissipation PD 150 • Channel temperature Tch 150 • Storage temperature Tstg –55 to +150 SGM2016AM SGM2016AP V V V mA mW °C °C Sony reserves the right to ch...


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