Part Number
|
SI1039X |
Manufacturer
|
Vishay Siliconix |
Description
|
P-Channel MOSFET |
Published
|
Apr 8, 2005 |
Detailed Description
|
SPICE Device Model Si1039X Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS • Mac...
|
Datasheet
|
SI1039X
|
Overview
SPICE Device Model Si1039X Vishay Siliconix P-Channel 2.
5-V (G-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
DESCRIPTION
The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS.
The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain ...
Similar Datasheet