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SI1032R

Vishay Siliconix
Part Number SI1032R
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Apr 8, 2005
Detailed Description N-Channel 1.5 V (G-S) MOSFET Si1032R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 5 at VGS = 4.5 V 7 at ...
Datasheet PDF File SI1032R PDF File

SI1032R
SI1032R

Overview
N-Channel 1.
5 V (G-S) MOSFET Si1032R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 5 at VGS = 4.
5 V 7 at VGS = 2.
5 V 20 9 at VGS = 1.
8 V 10 at VGS = 1.
5 V ID (mA) 200 175 150 50 SC-75A or SC-89 G1 3D S2 Top View Marking Code: G Ordering Information: Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low-Side Switching • Low On-Resistance: 5  • Low Threshold: 0.
9 V (typ.
) • Fast Switching Speed: 35 ns • TrenchFET® Power MOSFETs: 1.
5 V Rated • 2000 V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Si1032R Si1032X Parameter Symbol 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 6 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currenta TA = 25 °C TA = 85 °C ID IDM 200 140 110 100 500 210 200 150 140 600 Continuous Source Current (Diode Conduction)a IS 250 200 300 240 Maximum Power Dissipationa for SC-75 TA = 25 °C TA = 85 °C PD 280 145 250 130 340 170 300 150 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 Notes: a.
Surface mounted on FR4 board.
Unit V mA mW °C V Document Number: 71172 S10-2544-Rev.
F, 08-Nov-10 www.
vishay.
com 1 Si1032R/X Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) Drain-Sou...


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