Part Number
|
SI2303DS |
Manufacturer
|
Vishay Siliconix |
Description
|
P-Channel MOSFET |
Published
|
Apr 8, 2005 |
Detailed Description
|
P-Channel 30-V (D-S) MOSFET
Si2303DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
–30
rDS(on) (W)
0.240 @ VGS = –10 V 0....
|
Datasheet
|
SI2303DS
|
Overview
P-Channel 30-V (D-S) MOSFET
Si2303DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
–30
rDS(on) (W)
0.
240 @ VGS = –10 V 0.
460 @ VGS = –4.
5 V
ID (A)
–1.
7 –1.
3
TO-236 (SOT-23)
G1 S2
3D
Top View Si2303DS (A3)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS –30 VGS "20
Continuous Drain Current (TJ = 150_C) (surface mounted on FR4 board, t v 5 sec) Pulsed Drain Currenta Continuous Source Current (MOSFET Diode Conduction) (surface mounted on FR4 board, t v 5 sec)
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
ID IDM IS
PD TJ...
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