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SI2303DS

Vishay Siliconix
Part Number SI2303DS
Manufacturer Vishay Siliconix
Description P-Channel MOSFET
Published Apr 8, 2005
Detailed Description P-Channel 30-V (D-S) MOSFET Si2303DS Vishay Siliconix PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.240 @ VGS = –10 V 0....
Datasheet PDF File SI2303DS PDF File

SI2303DS
SI2303DS

Overview
P-Channel 30-V (D-S) MOSFET Si2303DS Vishay Siliconix PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.
240 @ VGS = –10 V 0.
460 @ VGS = –4.
5 V ID (A) –1.
7 –1.
3 TO-236 (SOT-23) G1 S2 3D Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS –30 VGS "20 Continuous Drain Current (TJ = 150_C) (surface mounted on FR4 board, t v 5 sec) Pulsed Drain Currenta Continuous Source Current (MOSFET Diode Conduction) (surface mounted on FR4 board, t v 5 sec) Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ...


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