Part Number
|
IRLW630A |
Manufacturer
|
Fairchild Semiconductor |
Description
|
ADVANCED POWER MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ ...
|
Datasheet
|
IRLW630A
|
Overview
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 200V ♦ Lower RDS(ON): 0.
335Ω (Typ.
)
IRLW/I630A
BVDSS = 200 V RDS(on) = 0.
4Ω ID = 9 A
D2-PAK
2
I2-PAK
1 1 3 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diod...
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