DatasheetsPDF.com

IRLW630A

Fairchild Semiconductor
Part Number IRLW630A
Manufacturer Fairchild Semiconductor
Description ADVANCED POWER MOSFET
Published Apr 16, 2005
Detailed Description $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ ...
Datasheet PDF File IRLW630A PDF File

IRLW630A
IRLW630A

Overview
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 200V ♦ Lower RDS(ON): 0.
335Ω (Typ.
) IRLW/I630A BVDSS = 200 V RDS(on) = 0.
4Ω ID = 9 A D2-PAK 2 I2-PAK 1 1 3 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diod...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)