Part Number
|
IRF1302 |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD - 94591
AUTOMOTIVE MOSFET
IRF1302
HEXFET® Power MOSFET
D
Benefits
● ● ● ● ● ●
Advanced Process Technology Ultra L...
|
Datasheet
|
IRF1302
|
Overview
PD - 94591
AUTOMOTIVE MOSFET
IRF1302
HEXFET® Power MOSFET
D
Benefits
● ● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 20V
G S
RDS(on) = 4.
0mΩ ID = 180A
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely eff...
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