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IRF1302S

International Rectifier
Part Number IRF1302S
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 94520 AUTOMOTIVE MOSFET Benefits ● ● ● ● ● ● IRF1302S IRF1302L HEXFET® Power MOSFET D Advanced Process Technolog...
Datasheet PDF File IRF1302S PDF File

IRF1302S
IRF1302S

Overview
PD - 94520 AUTOMOTIVE MOSFET Benefits ● ● ● ● ● ● IRF1302S IRF1302L HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 20V RDS(on) = 4.
0mΩ S ID = 174A† Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D2Pak IRF1302S TO-262 IRF1302L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Co...


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