Part Number
|
IRF1404L |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD -93853C
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Oper...
|
Datasheet
|
IRF1404L
|
Overview
PD -93853C
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ®
l l
IRF1404S IRF1404L
D
VDSS = 40V
G S
RDS(on) = 0.
004Ω ID = 162A
Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount ...
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