IRF240

IRF240 : .

IRF240 : IRF240 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) 200V 18A 0.18W 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44) 1.63 (0.064) 1.52 (0.060) 2 11.18 (0.440) 10.67 (0.420) 4.09 (0.161) 3.84 (0.151) 2 Pls 1 FEATURES • HERMETICALLY SEALED TO3 METAL PACKAGE 16.97 (0.668) 16.87 (0.664) • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE TO3 METAL PACKAGE Pin 1 = Source Pin 2 Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg R.

IRF240 : IRF240 Data Sheet March 1999 File Number 1584.3 18A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17422. Features • 18A, 200V • rDS(ON) = 0.180Ω .

IRF240 : ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Audio amplifier and servo motors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 200 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 18 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Ju.

IRF240 : www.DataSheet4U.com PD - 90370 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A  IRF240 200V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and tempe.

IRF240SMD : LAB MECHANICAL DATA Dimensions in mm (inches) SEME IRF240SMD N–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(on) FEATURES 200V 13.9A 0.180W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKI.

IRF241 : .

IRF241 : .

IRF241 : ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Audio amplifier and servo motors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 150 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 18 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Jun.

IRF242 : .

IRF242 : .

IRF242 : ·Drain Current ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.22Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Audio amplifier and servo motors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 200 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 16 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Ju.

IRF243 : .

IRF243 : .

IRF243 : ·Drain Current ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.22Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Audio amplifier and servo motors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 150 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 16 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Ju.

IRF244 : These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17423. January 1998 Features • 14A and 13A, 275V and 250V • rDS(ON) = 0.28Ω and 0.34Ω • Single Pulse Avalanche Energy Rated • SOA .