DatasheetsPDF.com

IRF240

International Rectifier
Part Number IRF240
Manufacturer International Rectifier
Description REPETITIVE AVALANCHE AND dv/dt RATED
Published Sep 14, 2007
Detailed Description www.DataSheet4U.com PD - 90370 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Prod...
Datasheet PDF File IRF240 PDF File

IRF240
IRF240


Overview
www.
DataSheet4U.
com PD - 90370 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.
18Ω ID 18A  IRF240 200V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-3 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight 18 11 72 125 1.
0 ±20 450 18 12.
5 5.
0 -55 to 150 300 (0.
063 in.
(1.
6mm) from case for 10s) 11.
5(typical) Units A W W/°C V mJ A mJ V/ns o C g For footnotes refer to the last page www.
irf.
com 1 01/24/01 IRF240 Electrical Characteristics Parameter BVDSS ∆BV DSS/∆TJ RDS(on) VGS(th) gfs IDSS @ Tj = 25°C (Unless Otherwise Specified) Min 200 — — — 2.
0 6.
1 — — — — 32 2.
2 14 — — — — — Typ Max Units — 0.
29 — — — — — — — — — — — — — — — 6.
1 — — 0.
18 0.
21 4.
0 — 25 250 100 -100 60 10.
6 38 20...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)