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Part Number
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IRF3710L |
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Manufacturer
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International Rectifier |
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Description
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Power MOSFET |
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Published
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Apr 16, 2005 |
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Detailed Description
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IRF3710SPbF IRF3710LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operatin...
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Datasheet
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IRF3710L
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Overview
IRF3710SPbF IRF3710LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 23mΩ
G
ID = 57A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power pac...
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