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IRF3710S

INCHANGE
Part Number IRF3710S
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 6, 2020
Detailed Description Isc N-Channel MOSFET Transistor IRF3710S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ...
Datasheet PDF File IRF3710S PDF File

IRF3710S
IRF3710S

Overview
Isc N-Channel MOSFET Transistor IRF3710S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 57 40 180 PD Total Dissipation @TC=25℃ 200 Tch Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
75 40 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IRF3710S ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER...


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