Philips Semiconductors
Product specification
N-channel TrenchMOS™
transistor
IRF530N
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 100 V ID = 17 A
g
RDS(ON) ≤ 110 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope using ’trench’ technology.
Applications:• d.
c.
to d.
c.
converters • switched mode power supplies The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING
PIN 1 2 3 tab gate drain source drain DESCRIPTION
SOT78 (TO220AB)
tab drain
1 2 3 gate source drain
LIMITING VALUES
Limiting values in accordance with...