| Part Number | IRF7471 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | PD- 94036B SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Hi... |
| Features |
– – Max. 20 50 Units °C/W Notes through are on page 8 www.irf.com 1 3/25/01 IRF7471 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. Typ. Max. Units Condition... |
| File Size | 214.24KB |
| Datasheet |
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IRF7470 : PD- 93913C SMPS MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification IRF7470 HEXFET® Power MOSFET VDSS 40V RDS(on) max 13mΩ ID 10A Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction a.
IRF7470PBF : PD- 95276 SMPS MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification l Lead-Free Benefits l l l IRF7470PbF HEXFET® Power MOSFET VDSS 40V RDS(on) max 13mΩ ID 10A Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current S S S G 1 8 7 A A D D D D 2 3 6 4 5 Top View www.DataSheet4U.com SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Line.
IRF7471PbF : PD- 95726 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power VDSS 40V l Lead-Free IRF7471PbF HEXFET® Power MOSFET RDS(on) max 13mΩ ID 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Curr.
IRF7473 : PD- 94037A IRF7473 HEXFET® Power MOSFET Applications l Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterrutible Power Supply Benefits l Ultra Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristic l Improved Avalanche Ruggedness and Dynamic dv/dt l Fully Characterized Avalanche Voltage and Current Typical SMPS Topologies l Full and Half Bridge 48V input Circuit l Forward 24V input Circuit Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear D.
IRF7473PBF : PD- 95559 IRF7473PbF Applications l Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterrutible Power Supply l Lead-Free Benefits l Ultra Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristic l Improved Avalanche Ruggedness and Dynamic dv/dt l Fully Characterized Avalanche Voltage and Current Typical SMPS Topologies l Full and Half Bridge 48V input Circuit l Forward 24V input Circuit Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating.
IRF7473PBF-1 : VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 100 V 26 mΩ 61 nC 6.9 A Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF7473PbF-1 S1 S2 HEXFET® Power MOSFET AA 8D 7D S3 G4 6D 5D Top View SO-8 Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7473PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7473PbF-1 IRF7473TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Param.
IRF7473TRPBF : isc N-Channel MOSFET Transistor ·FEATURES ·With SOP-8 packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Drain Current-Single Pulsed Tc=25℃ Tc=75℃ PD Power Dissipation Tj Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-a) Channel-to-ambient thermal resistance INCHANGE Semiconductor IRF7473TRPBF VALUE .
IRF7474 : PD- 94097 IRF7474 HEXFET® Power MOSFET Applications Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterruptible Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristic l Improved Avalanche Ruggedness and Dynamic dv/dt l Fully Characterized Avalanche Voltage and Current l VDSS 100V RDS(on) max 63mΩ@VGS = 10V ID 4.5A S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Diss.
IRF7475 : PD - 94531A IRF7475 HEXFET® Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current VDSS 12V 15m:@VGS = 4.5V A A D D D D RDS(on) max Qg 19nC S S S G 1 8 7 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 12 ± 12 11 7.0 88 2.5 1.6 0.02 -55 to + 150 U.
IRF7475PBF : PD - 95278 IRF7475PbF HEXFET® Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current VDSS 12V 15m:@VGS = 4.5V 1 8 7 RDS(on) max Qg 19nC S S S G A A D D D D 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 12 ± 12 11 7.0 88 2.5 1.6 0.02 -5.
IRF7476 : PD - 94311 IRF7476 HEXFET® Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current VDSS 12V RDS(on) max 8.0mΩ@VGS = 4.5V ID 15A S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pul.
IRF7476PBF : PD - 95279 IRF7476PbF HEXFET® Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. l Lead-Free Benefits l l l VDSS 12V RDS(on) max 8.0mW@VGS = 4.5V ID 15A S S S G 1 8 7 A A D D D D 2 3 6 4 5 Ultra-Low Gate Impedance Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current,.
IRF7477 : PD- 94094A SMPS MOSFET IRF7477 HEXFET® Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l Low Charge Ratio to Eliminate False Turn On in High Frequency Circuits VDSS 30V RDS(on) max (mΩ) 8.5@VGS = 10V 10@VGS = 4.5V ID 14A 11A S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V P.
IRF7477PBF : PD- 95334 SMPS MOSFET Applications l High Frequency Synchronous Buck Converters for Computers and Communications l Lead-Free IRF7477PbF HEXFET® Power MOSFET VDSS 30V RDS(on) max (mW) 8.5@VGS = 10V 10@VGS = 4.5V ID 14A 11A Benefits Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l Low Charge Ratio to Eliminate False Turn On in High Frequency Circuits l S S S G 1 8 7 A A D D D D 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, V.
IRF7478 : PD- 94055A SMPS MOSFET Applications High frequency DC-DC converters IRF7478 HEXFET® Power MOSFET RDS(on) max (mΩ) 26@VGS = 10V 30@VGS = 4.5V l VDSS 60V ID 4.2A 3.5A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to.
IRF7478PBF : PD- 95280 SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l IRF7478PbF HEXFET® Power MOSFET VDSS 60V RDS(on) max (mW) 26@VGS = 10V 30@VGS = 4.5V ID 4.2A 3.5A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 www.DataSheet4U.com Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation.