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IRF7473PBF-1

International Rectifier
Part Number IRF7473PBF-1
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 22, 2016
Detailed Description VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 100 V 26 mΩ 61 nC 6.9 A Features Industry-standard pinout SO...
Datasheet PDF File IRF7473PBF-1 PDF File

IRF7473PBF-1
IRF7473PBF-1

Overview
VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 100 V 26 mΩ 61 nC 6.
9 A Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF7473PbF-1 S1 S2 HEXFET® Power MOSFET AA 8D 7D S3 G4 6D 5D Top View SO-8 Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7473PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7473PbF-1 IRF7473TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
6.
9 5.
5 55 2.
5 0.
02 ± 20 5.
8 -55 to + 150 300 (1.
6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Notes  through † are on page 8 1 www.
irf.
com © 2014 International Rectifier Typ.
––– ––– Submit Datasheet Feedback Max.
20 50 Units °C/W June 23, 2014 IRF7473PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current 100 ––– ––– 3.
5 ––– ––– ––– 0.
11 22 ––– ––– ––– ––– ––– 26 5.
5 1.
0 250 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– 100 ––– ––– -100 Units V V/°C mΩ V μA nA Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA ƒ VGS = 10V, ID = 4.
1A ƒ VDS = VGS, ID = 250μA VDS = 95V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 150°C VGS = 20V VGS ...


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