Part Number
|
IRF7702 |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD - 93849C PROVISIONAL
IRF7702
HEXFET® Power MOSFET RDS(on) max
0.014@VGS = -4.5V 0.019@VGS = -2.5V 0.027@VGS = -1.8V
...
|
Datasheet
|
IRF7702
|
Overview
PD - 93849C PROVISIONAL
IRF7702
HEXFET® Power MOSFET RDS(on) max
0.
014@VGS = -4.
5V 0.
019@VGS = -2.
5V 0.
027@VGS = -1.
8V
l l l l l l
Ultra Low On-Resistance -1.
8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.
1mm) Available in Tape & Reel
VDSS
-12V
ID
-8.
0A -7.
0A -5.
8A
1
D
8 7
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
2 3 4 1= 2= 3= 4= D S S G
G
6
S
8= 7= 6= 5= D S S D
5
with an extremely efficient and reliable device fo...
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