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IRF7702

International Rectifier
Part Number IRF7702
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 93849C PROVISIONAL IRF7702 HEXFET® Power MOSFET RDS(on) max 0.014@VGS = -4.5V 0.019@VGS = -2.5V 0.027@VGS = -1.8V ...
Datasheet PDF File IRF7702 PDF File

IRF7702
IRF7702

Overview
PD - 93849C PROVISIONAL IRF7702 HEXFET® Power MOSFET RDS(on) max 0.
014@VGS = -4.
5V 0.
019@VGS = -2.
5V 0.
027@VGS = -1.
8V l l l l l l Ultra Low On-Resistance -1.
8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile ( < 1.
1mm) Available in Tape & Reel VDSS -12V ID -8.
0A -7.
0A -5.
8A 1 D 8 7 Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner 2 3 4 1= 2= 3= 4= D S S G G 6 S 8= 7= 6= 5= D S S D 5 with an extremely efficient and reliable device fo...


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