Part Number
|
IRF7752 |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD -94030A
IRF7752
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Packag...
|
Datasheet
|
IRF7752
|
Overview
PD -94030A
IRF7752
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.
1mm) Available in Tape & Reel
VDSS
30V
RDS(on) max
0.
030@VGS = 10V 0.
036@VGS = 4.
5V
ID
4.
6A 3.
9A
Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner
1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= 8 7 6 5 D2 S2 S2 G2
with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 package,...
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