PD - 95858 IRF8915 HEXFET® Power MOSFET Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box VDSS 20V 18.
3m:@VGS = 10V RDS(on) max ID 8.
9A S1 G1 1 8 7 D1 D1 D2 D2 2 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current S2 G2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max.
20 ± 20 8.
9 7.
1 71 2.
0 1.
3 0.
016 -55 to + 150 Units V c ...

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