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IRF8910GPBF

International Rectifier
Part Number IRF8910GPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 23, 2013
Detailed Description PD -96257 IRF8910GPbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, grap...
Datasheet PDF File IRF8910GPBF PDF File

IRF8910GPBF
IRF8910GPBF


Overview
PD -96257 IRF8910GPbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l l VDSS 20V 13.
4m:@VGS = 10V 1 2 3 4 RDS(on) max ID 10A Lead-Free Halogen-Free S1 G1 8 7 6 5 D1 D1 D2 D2 Benefits l Very Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.
Gate Rating S2 G2 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max.
20 ± 20 10 8.
3 82 2.
0 1.
3 0.
016 -55 to + 150 Units V c A W W/°C °C Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient f g Typ.
––– ––– Max.
42 62.
5...



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