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Part Number
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IRF9Z34N |
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Manufacturer
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International Rectifier |
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Description
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Power MOSFET |
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Published
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Apr 16, 2005 |
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Detailed Description
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PD - 9.1485B
IRF9Z34N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperatu...
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Datasheet
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IRF9Z34N
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Overview
PD - 9.
1485B
IRF9Z34N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -55V
G S
RDS(on) = 0.
10Ω ID = -19A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-indust...
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