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IRF9Z34 Datasheet PDF


Part Number IRF9Z34
Manufacturer Vishay
Title Power MOSFET
Description Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resi...
Features
• Dynamic dV/dt rating
• Repetitive avalanche rated Available
• P-channel
• 175 °C operating temperature Available
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This dat...

File Size 154.20KB
Datasheet IRF9Z34 PDF File








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IRF9Z30PBF : S TO-220AB www.DataSheet4U.com The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high transconductance and extreme device ruggedness. The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation. They retain all of the features of the more common N-Channel HEXFETs such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-Channel HEXFETs are intended for use in power stages where complementary symmetry with N-Channel devi.

IRF9Z34 : .

IRF9Z34L : l D VDSS = -60V RDS(on) = 0.14Ω G S ID = -18A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applicatio.

IRF9Z34L : Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipat.

IRF9Z34LPBF : PD- 95767 IRF9Z34SPbF IRF9Z34LPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 06/07/05 IRF9Z34S/LPbF 2 www.irf.com IRF9Z34S/LPbF www.irf.com 3 IRF9Z34S/LPbF 4 www.irf.com IRF9Z34S/LPbF www.irf.com 5 IRF9Z34S/LPbF 6 www.irf.com IRF9Z34S/LPbF www.irf.com 7 IRF9Z34S/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASSEMBLE D ON WW 02, 2000 IN T HE ASSE MBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTE RNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER F530S DAT E CODE P = DES IGNAT E S .

IRF9Z34N : l l D VDSS = -55V G S RDS(on) = 0.10Ω ID = -19A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the indu.

IRF9Z34N : ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -19 IDM Drain Current-Single Pulsed -68 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 2.2 62 UNIT ℃/W ℃/W isc website:www.isc.

IRF9Z34NL : l l D VDSS = -55V RDS(on) = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applicat.

IRF9Z34NL : isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤100mΩ(@VGS= -10V; ID= -10A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance IRF9Z34NL VALUE -55 ±20 -19 68 -55~175 -55~175 UNIT V V A W ℃ ℃ MAX.

IRF9Z34NLPBF : www.DataSheet4U.com PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF • Lead-Free www.irf.com 1 04/25/05 www.DataSheet4U.com IRF9Z34NS/LPbF 2 www.irf.com www.DataSheet4U.com IRF9Z34NS/LPbF www.irf.com 3 www.DataSheet4U.com IRF9Z34NS/LPbF 4 www.irf.com www.DataSheet4U.com IRF9Z34NS/LPbF www.irf.com 5 www.DataSheet4U.com IRF9Z34NS/LPbF 6 www.irf.com www.DataSheet4U.com IRF9Z34NS/LPbF www.irf.com 7 www.DataSheet4U.com IRF9Z34NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASSEMBLE D ON WW 02, 2000 IN T HE ASSE MBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE PAR.

IRF9Z34NS : l l D VDSS = -55V RDS(on) = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applicat.

IRF9Z34NS : isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤100mΩ(@VGS= -10V; ID= -10A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -19 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance.

IRF9Z34NSPBF : • Lead-Free PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF www.irf.com 1 04/25/05 IRF9Z34NS/LPbF 2 www.irf.com IRF9Z34NS/LPbF www.irf.com 3 IRF9Z34NS/LPbF 4 www.irf.com IRF9Z34NS/LPbF www.irf.com 5 IRF9Z34NS/LPbF 6 www.irf.com IRF9Z34NS/LPbF www.irf.com 7 IRF9Z34NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASSEMBLE D ON WW 02, 2000 IN T HE ASSE MBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE F 530S PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTE RNAT IONAL RECT IFIER L OGO ASS EMBLY LOT CODE F530S PART NUMBER DAT E CODE P = DES IGNAT E S LEAD.

IRF9Z34S : l D VDSS = -60V RDS(on) = 0.14Ω G S ID = -18A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applicatio.

IRF9Z34S : Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipat.

IRF9Z34SPBF : PD- 95767 IRF9Z34SPbF IRF9Z34LPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 06/07/05 IRF9Z34S/LPbF 2 www.irf.com IRF9Z34S/LPbF www.irf.com 3 IRF9Z34S/LPbF 4 www.irf.com IRF9Z34S/LPbF www.irf.com 5 IRF9Z34S/LPbF 6 www.irf.com IRF9Z34S/LPbF www.irf.com 7 IRF9Z34S/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASSEMBLE D ON WW 02, 2000 IN T HE ASSE MBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTE RNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER F530S DAT E CODE P = DES IGNAT E S .




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