Part Number
|
VND10N06-1 |
Manufacturer
|
STMicroelectronics |
Description
|
fully autoprotected Power MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
VND10N06 VND10N06-1
"OMNIFET" fully autoprotected Power MOSFET
Features
Max on-state resistance (per ch.) Current limi...
|
Datasheet
|
VND10N06-1
|
Overview
VND10N06 VND10N06-1
"OMNIFET" fully autoprotected Power MOSFET
Features
Max on-state resistance (per ch.
) Current limitation (typ) Drain-Source clamp voltage
RDS(on) Ilim
VCLAMP
0.
3Ω 10A 60V
■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Logic level input threshold ■ ESD protection ■ Schmitt trigger on input ■ High noise immunity
3 1
DPAK TO-252
IPAK TO-251
3
2 1
Description
The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications.
Built in thermal shutdown, linear current l...
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