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VND10N06

STMicroelectronics
Part Number VND10N06
Manufacturer STMicroelectronics
Description fully autoprotected Power MOSFET
Published Apr 16, 2005
Detailed Description VND10N06 VND10N06-1 "OMNIFET" fully autoprotected Power MOSFET Features Max on-state resistance (per ch.) Current limi...
Datasheet PDF File VND10N06 PDF File

VND10N06
VND10N06

Overview
VND10N06 VND10N06-1 "OMNIFET" fully autoprotected Power MOSFET Features Max on-state resistance (per ch.
) Current limitation (typ) Drain-Source clamp voltage RDS(on) Ilim VCLAMP 0.
3Ω 10A 60V ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Logic level input threshold ■ ESD protection ■ Schmitt trigger on input ■ High noise immunity 3 1 DPAK TO-252 IPAK TO-251 3 2 1 Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications.
Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Table 1.
Device summary Package DPAK IPAK Tube VND10N06 VND10N06-1 Order codes Tape and reel VND10N06TR September 2013 Rev 4 1/25 www.
st.
com 25 Contents Contents VND10N06 / VND10N06-1 1 Block diagra...


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