UTC 2SA1020
PNP EPITAXIAL SILICON
TRANSISTOR
SILICON
PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and power switching applications.
1
FEATURES
*Low collector saturation voltage: VCE(sat)=-0.
5V(max.
) (IC=-1A) *High speed switching time: tstg=1.
0µs(Typ.
) *Complement to UTC 2SC2655
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL VALUE
-50 -50 -5 -2 0.
5 1 150 -55 ~ +150
UNIT
V V V A W W °C °C
Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current Ic Collector Power Dissipation PC Collector Power Dissipation PC* Junction Temperature Tj Storage Temperature TSTG ...