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UTC2SA1020

Unisonic Technologies
Part Number UTC2SA1020
Manufacturer Unisonic Technologies
Description PNP EPITAXIAL SILICON TRANSISTOR
Published Apr 16, 2005
Detailed Description UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed ...
Datasheet PDF File UTC2SA1020 PDF File

UTC2SA1020
UTC2SA1020

Overview
UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.
1 FEATURES *Low collector saturation voltage: VCE(sat)=-0.
5V(max.
) (IC=-1A) *High speed switching time: tstg=1.
0µs(Typ.
) *Complement to UTC 2SC2655 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL VALUE -50 -50 -5 -2 0.
5 1 150 -55 ~ +150 UNIT V V V A W W °C °C Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current Ic Collector Power Dissipation PC Collector Power Dissipation PC* Junction Temperature Tj Storage Temperature TSTG * : Mounted on cermic substrate( 250mm2 × 0.
8t ) ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector cut-off current Emitter cut-off current Collector to emitter breakdown voltage DC Current Gain Collector to emitter saturation voltage Base to emitter saturation vol...


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