Advanced Power MOSFET
Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.444 Ω (Typ.) SFR/U9120 BVDSS = -100 V RDS(on) = 0.6 Ω ID = -4.9 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. ...
Fairchild Semiconductor