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U9120

Fairchild Semiconductor
Part Number U9120
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Apr 16, 2005
Detailed Description Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n ...
Datasheet PDF File U9120 PDF File

U9120
U9120

Overview
Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.
) @ VDS = -100V n Lower RDS(ON) : 0.
444 Ω (Typ.
) SFR/U9120 BVDSS = -100 V RDS(on) = 0.
6 Ω ID = -4.
9 A D-PAK 2 1 3 1 I-PAK 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -100 -4.
9 -3.
4 1 O Units V A A V mJ A mJ V/ns W W W/ C o -20 ±30 144 -4.
9 3.
2 -6.
5 2.
5 32 0.
26 - 55 to +150 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for ...


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