TN2106
N-Channel Enhancement-Mode Vertical DMOS FET
Features
► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain ► Complementary N- and P-channel devices
Applications
► Logic level interfaces - ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo-voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switches
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing pr...