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TN2106

Part Number	TN2106
Manufacturer	Microchip
Description	N-Channel Vertical DMOS FET
Published	Jan 22, 2024
Detailed Description	TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Require...
Datasheet	TN2106 PDF File

Overview

TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TN2106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.
This combination produces a device...

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