TPC8103
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOS II)
TPC8103
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Unit: mm
l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 9.
5 mΩ (typ.
) l High forward transfer admittance: |Yfs| = 20 S (typ.
) l Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) l Enhancement-mode: Vth = −0.
8~−2.
0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
(t = 10 s) (Note 2a)
Drai...