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TPC8103

Toshiba Semiconductor
Part Number TPC8103
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPC8103 Lithium Ion Battery Applications ...
Datasheet PDF File TPC8103 PDF File

TPC8103
TPC8103

Overview
TPC8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPC8103 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 9.
5 mΩ (typ.
) l High forward transfer admittance: |Yfs| = 20 S (typ.
) l Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) l Enhancement-mode: Vth = −0.
8~−2.
0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drai...


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