TPC8402
TOSHIBA Field Effect
Transistor Silicon N, P Channel MOS Type (π−MOSVI/U−MOSII)
TPC8402
Lithium Ion Secondary Battery Applications Notebook PCs Portable Equipment Applications
Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.
) N Channel RDS (ON) = 37 mΩ (typ.
) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.
) N Channel |Yfs| = 6 S (typ.
) Low leakage current : P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement−mode : P Channel Vth = −0.
8~ −2.
0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 0.
8~2.
0 V (VDS = 10 V, ID = 1mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20...