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TPC8401

Toshiba Semiconductor
Part Number TPC8401
Manufacturer Toshiba Semiconductor
Description MOSFET
Published Apr 16, 2005
Detailed Description TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII) TPC8401 Lithium Ion Secondary Battery A...
Datasheet PDF File TPC8401 PDF File

TPC8401
TPC8401

Overview
TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII) TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.
) N Channel RDS (ON) = 14 mΩ (typ.
) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.
) N Channel |Yfs| = 8 S (typ.
) Low leakage current : P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement−mode : P Channel Vth = −0.
8~ −2.
0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 0.
8~2.
5 V (VDS = 10 V, ID = 1mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gat...


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