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Part Number
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TLN108 |
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Manufacturer
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Toshiba Semiconductor |
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Description
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INFRARED LEDS PHOTO SENSORS |
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Published
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Apr 16, 2005 |
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Detailed Description
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TOSHIBA Infrared LED GaAs Infrared Emitter
TLN108(F)
Lead(Pb)-Free Opto−Electronic Switches Tape And Card Readers Equipm...
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Datasheet
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TLN108
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Overview
TOSHIBA Infrared LED GaAs Infrared Emitter
TLN108(F)
Lead(Pb)-Free Opto−Electronic Switches Tape And Card Readers Equipment Using Infrared Transmission
• TO−18 metal package • High radiant intensity: IE = 20 mW/sr (typ.
) • Excellent radiant−intensity linearity.
Modulation by pulse operation
and high frequency is possible.
• Highly reliable due to hermetic seal
TLN108(F)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta 25°C)
Pulse forward current
(Note 1)
Reverse voltage
Operating temperature range
Storage temperature range
IF
ΔIF / °C
IFP VR Topr Tstg
100
−1
1 5 −40~125 −55~150
mA
mA / °C
A V °C °C
...
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