DatasheetsPDF.com

TLN108

Toshiba Semiconductor
Part Number TLN108
Manufacturer Toshiba Semiconductor
Description INFRARED LEDS PHOTO SENSORS
Published Apr 16, 2005
Detailed Description TOSHIBA Infrared LED GaAs Infrared Emitter TLN108(F) Lead(Pb)-Free Opto−Electronic Switches Tape And Card Readers Equipm...
Datasheet PDF File TLN108 PDF File

TLN108
TLN108

Overview
TOSHIBA Infrared LED GaAs Infrared Emitter TLN108(F) Lead(Pb)-Free Opto−Electronic Switches Tape And Card Readers Equipment Using Infrared Transmission • TO−18 metal package • High radiant intensity: IE = 20 mW/sr (typ.
) • Excellent radiant−intensity linearity.
Modulation by pulse operation and high frequency is possible.
• Highly reliable due to hermetic seal TLN108(F) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current Forward current derating (Ta > 25°C) Pulse forward current (Note 1) Reverse voltage Operating temperature range Storage temperature range IF ΔIF / °C IFP VR Topr Tstg 100 −1 1 5 −40~125 −55~150 mA mA / °C A V °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Pulse width ≦100μs, repetitive frequency = 100 Hz TOSHIBA 4−5Q2 Weight: 0.
33 g (typ.
) Pin Connection 12 1.
Anode 2.
Cathode (case) Markings Product No.
(TL omitted) Monthly lot number N108 ･ Letter color：Red Month of manufacture (January to December denoted by letters A to L respectively) Year of manufacture (last digit of year of manufacture) 1 2007-10-01 TLN108(F) Optical And Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Pulse forward voltage Reverse current Radiant intensity Radiant power Capacitance Peak emission wavelength Spectral line half width Half value angle Symbol VF VFP IR IE PO CT λP Δλ θ1 2 Test Condition IF = 50 mA IFP = 1 A VR =...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)